Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.
Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.
* PCmark7(250GB ) : 6700(840 EVO) < 7600(850 EVO)
** Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) < 88,000 IOPS(850 EVO)
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilizing unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.
* PCMARK7 RAW(250GB) : 7500 < 15000(Rapid mode)
The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimized performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.
* TBW : Total Bytes Written
** TBW : 43(840 EVO) < 75(850 EVO 120/250GB), 150(850 EVO 500/1TB)
*** Sustained Performance(250GB) : 3300 IOPS(840 EVO) < 6500 IOPS(850 EVO), Performance measured after 12 hours “Random Write” test
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimized for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND.
* Power(250GB) : 3.2 Watt(840 EVO) > 2.4 Watt(850 EVO)
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256 encryption-bit security technology secures data without any performance degradation and complies with TCG Opal 2.0. It is also compatible with Microsoft e-drive IEEE1667 so your data is protected at all times for your peace of mind.
The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data. When temperatures rise above an optimal threshold, the Thermal Guard automatically throttles temperatures down protecting your data while maintaining responsiveness to ensure your computer is always safe from overheating.
In three simple steps the Samsung’s One-stop Install Navigator software easily allows you to migrate all the data and applications from the existing primary storage to the 850 EVO. The Samsung Magician software also allows you to optimize and manage your system best suited for your SSD.
Samsung is the only SSD brand to design and manufacture all its components in-house allowing complete optimized integration. The result – enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the MEX/MGX controller.
Samsung is a registered trademark of Samsung Electronics Co., Ltd.
IEEE is a registered trademark of the Institute of Electrical and Electronic Engineers, Inc.
Microsoft is a registered trademark of Microsoft Corporation in the United States and/or other countries.
Ultrabook is a trademark of Intel Corporation in the U.S. and/or other countries.
|Usage Application||Client PCs|
|Capacity||120GB, 250GB, 500GB, 1TB(1,000GB)|
|Dimension (W x H x D)||100 x 69.85 x 6.8 (mm)|
|Interface||SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)|
|Form factor||2.5 inch|
|Controller||120/250/500GB : Samsung MGX controller|
1TB: Samsung MEX controller
|NAND Flash Memory||Samsung 32 layer 3D V-NAND|
|DRAM Cache Memory||256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2|
|Performance*||Sequential Read||Max. 540 MB/s|
|Sequential Write**||Max. 520 MB/s|
|4KB Random Read (QD1)||Max. 10,000 IOPS|
|4KB Random Write (QD1)||Max. 40,000 IOPS|
|4KB Random Read (QD32)||Max. 98,000 IOPS(500GB/1TB)|
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)
|4KB Random Write (QD32)||Max. 90,000 IOPS(500GB/1TB)|
Max. 88,000 IOPS(120GB/250GB)
|Data Security||AES 256-bit Full Disk Encryption (FDE)|
TCG/Opal V2.0, Encrypted Drive(IEEE1667)
|Weight||Max. 66g (1TB)|
|Reliability||MTBF: 1.5 million hours|
500GB/1TB: 150 TBW
|Power Consumption***||Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB)|
Idle: Max. 50mW
Device Sleep: 2mW(120/250/500GB), 4mW(1TB)
|Supporting features||TRIM(Required OS support), Garbage Collection, S.M.A.R.T.|
|Temperature||Operating: 0°C to 70°C|
Non-Operating: -40°C to 85°C
|Humidity||5% to 95%, non-condensing|
|Vibration||Non-Operating: 20~2000Hz, 20G|
|Shock||Non-Operating: 1500G, duration 0.5m sec, 3 axis|
|Warranty||5 Years Limited More Information >>|
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